Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
Unit of Measure
Specifications
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Absolute Maximum Ratings (TC = 25 Degree Celsius (ºC), Unless Otherwise Noted)
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Thermal Resistance Ratings
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Features
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Note
Specifications
Available |
N/A {0} |
Manufacturer Stock |
N/A {0} |
Brands |
N/A VISHAY® |
Manufacturer |
N/A VISHAY� |
Industry Standards |
N/A Restriction of Hazardous Substances (RoHS) Compliant |
Absolute Maximum Ratings (TC = 25 Degree Celsius (ºC), Unless Otherwise Noted)
Drain-Source Voltage (VDS) |
N/A 100 V |
Gate-Source Voltage Tolerance (±) (VGS) |
N/A 20 V |
Continuous Drain Current (ID) at TC = 25 Degree Celsius (ºC) Temperature1 | N/A 1.5 A |
Continuous Drain Current (ID) at TC = 100 Degree Celsius (ºC) Temperature2 | N/A 0.96 A |
Pulsed Drain Current (IDM)3 | N/A 12 A |
Linear Derating Factor |
N/A 0.025 W/ºC |
Linear Derating Factor (Printed Circuit Board Mount)4 | N/A 0.017 W/ºC |
Single Pulse Avalanche Energy (EAS)5 | N/A 150 MJ |
Avalanche Current (IAR)6 | N/A 1.5 A |
Repetitive Avalanche Energy (EAR)7 | N/A 0.31 MJ |
Maximum Power Dissipation (PD) at TC = 25 Degree Celsius (ºC) Temperature |
N/A 3.1 W |
Maximum Power Dissipation (PD) at TC = 25 Degree Celsius (ºC) Temperature (Printed Circuit Board Mount)8 | N/A 2 W |
Peak Diode Recovery (dV/dt)9 | N/A 5.5 V/ns |
Operational Junction and Storage Temperature Range (Tj = Tstg) |
N/A -55 to 150 ºC |
Soldering Recommendations (Peak Temperature)10 | N/A 300 ºC |
Thermal Resistance Ratings
Maximum Thermal Resistance Junction to Ambient (RthJA) (Printed Circuit Board Mount)11 | N/A 60 ºC/W |
Maximum Thermal Resistance (Junction to Case (Drain)) (RthJC) |
N/A 40 ºC/W |
- 1 VGS at 10 V
- 2 VGS at 10 V
- 3 Repetitive rating; pulse width limited by maximum junction temperature
- 4 When mounted on 1" square PCB (FR-4 or G-10 material)
- 5 VDD = 25 V, starting TJ = 25 ºC, L = 25 mH, Rg = 25 ?, IAS = 3.0 A
- 6 Repetitive rating; pulse width limited by maximum junction temperature
- 7 Repetitive rating; pulse width limited by maximum junction temperature
- 8 When mounted on 1" square PCB (FR-4 or G-10 material)
- 9 ISD ≤ 5.6 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 ºC
- 10 1.6 mm from case
- 11 When mounted on 1" square PCB (FR-4 or G-10 material)
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