Unit of Measure
Specifications
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Mechanical Data
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Absolute Maximum Ratings (Tamb = 25 Degree Celsius (ºC), Unless Otherwise Specified)
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Electrostatic Discharge (ESD) Ratings
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Electrical Characteristics (Tamb = 25 Degree Celsius (ºC), Unless Otherwise Specified)
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Features
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Note
Specifications
Available |
N/A {0} |
Manufacturer Stock |
N/A {0} |
Brands |
N/A Diodes Incorporated® |
Manufacturer |
N/A Diodes Incorporated� |
Compliance |
N/A AEC-Q101 |
Reel Size |
N/A 7 in |
Tape Width |
N/A 12 mm |
Terminals |
N/A Finish - Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 |
Low Saturation Voltage VCE(sat) at -1 Ampere (A) |
N/A -140 mV |
Units Per Package |
N/A 1000 |
Package Type |
N/A Reel |
Approximate Weight |
N/A 0.112 g |
Industry Standards |
N/A Flammability: Underwriters Laboratories (UL) 94V-0 Restriction of Hazardous Substances (RoHS) Compliant |
Mechanical Data
Case |
N/A SOT223 |
Case Material |
N/A Molded Plastic, "Green" Molding Compound. |
Moisture Sensitivity |
N/A Level 1 per J-STD-020 |
Absolute Maximum Ratings (Tamb = 25 Degree Celsius (ºC), Unless Otherwise Specified)
Collector-Base Voltage (VCBO) |
N/A -45 V |
Collector-Emitter Voltage (VCEO) |
N/A -40 V |
Emitter-Base Voltage (VEBO) |
N/A -7 V |
Continuous Collector Current (IC) |
N/A -3 A |
Peak Pulse Current (ICM) |
N/A -5 A |
Power Dissipation (PD) |
N/A
For a device mounted with the collector lead on 52 mm x 52 mm 2 oz copper that is on a single-sided 1.6 mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.: 3.0 W For a device mounted with the collector lead on 25 mm x 25 mm 2 oz copper that is on a single-sided 1.6 mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.: 2.0 W For a device mounted with the collector lead on 25 mm x 25 mm 1 oz copper that is on a single-sided 1.6 mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.: 1.6 W For a device mounted on minimum recommended pad layout device is measured under still air conditions whilst operating in a steady-state.: 1.2 W |
Operating and Storage Temperature Range (TJ, TSTG) |
N/A -55 to +150 ºC |
Electrostatic Discharge (ESD) Ratings
Electrostatic Discharge - Human Body Model (ESD HBM) |
N/A 4000 V |
Electrostatic Discharge - Machine Model (ESD MM) |
N/A 400 V |
Electrical Characteristics (Tamb = 25 Degree Celsius (ºC), Unless Otherwise Specified)
Minimum Collector-Base Breakdown Voltage (BVCBO) at IC = -100 Microampere (μA) |
N/A -45 V |
Typical Collector-Base Breakdown Voltage (BVCBO) at IC = -100 Microampere (μA) |
N/A -95 V |
Minimum Collector-Emitter Breakdown Voltage (BVCER) at IC = -100 Microampere (μA) |
N/A -40 V |
Typical Collector-Emitter Breakdown Voltage (BVCER) at IC = -100 Microampere (μA) |
N/A -90 V |
Minimum Collector-Emitter Breakdown Voltage (BVCEO) at IC = -10 Milliampere (mA) |
N/A -40 V |
Typical Collector-Emitter Breakdown Voltage (BVCEO) at IC = -10 Milliampere (mA) |
N/A -85 V |
Minimum Collector-Emitter Breakdown Voltage (BVCEV) at IE = -100 Microampere (μA), VEB = +1 Volt (V) |
N/A -40 V |
Typical Collector-Emitter Breakdown Voltage (BVCEV) at IE = -100 Microampere (μA), VEB = +1 Volt (V) |
N/A -90 V |
Minimum Emitter-Base Breakdown Voltage (BVEBO) at IE = -100 Microampere (μA) |
N/A -7 V |
Typical Emitter-Base Breakdown Voltage (BVEBO) at IE = -100 Microampere (μA) |
N/A -8.5 V |
Typical Collector Cut Off Current (ICBO) at VCB = -36 Volt (V) |
N/A -0.3 nA |
Maximum Collector Cut Off Current (ICBO) at VCB = -36 Volt (V) |
N/A -100 nA |
Typical Emitter Cut Off Current (IEBO) at VEB = -4 Volt (V) |
N/A -0.3 nA |
Maximum Emitter Cut Off Current (IEBO) at VEB = -4 Volt (V) |
N/A -100 nA |
Typical Emitter Cut Off Current (IEBO) at VCE = -32 Volt (V) |
N/A -0.3 nA |
Maximum Emitter Cut Off Current (IEBO) at VCE = -32 Volt (V) |
N/A -100 nA |
Minimum DC Current Transfer Static Ratio (HFE) at IC = -10 Milliampere (mA), VCE = -2 Volt (V) |
N/A 270 |
Minimum DC Current Transfer Static Ratio (HFE) at IC = -500 Milliampere (mA), VCE = -2 Volt (V) |
N/A 250 |
Minimum DC Current Transfer Static Ratio (HFE) at IC = -2 Ampere (A), VCE = -2 Volt (V) |
N/A 180 |
Minimum DC Current Transfer Static Ratio (HFE) at IC = -3 Ampere (A), VCE = -2 Volt (V) |
N/A 100 |
Maximum DC Current Transfer Static Ratio (HFE) at IC = -10 Milliampere (mA), VCE = -2 Volt (V) |
N/A 450 |
Maximum DC Current Transfer Static Ratio (HFE) at IC = -500 Milliampere (mA), VCE = -2 Volt (V) |
N/A 400 |
Typical DC Current Transfer Static Ratio (HFE) at IC = -500 Milliampere (mA), VCE = -2 Volt (V) |
N/A 800 |
Maximum DC Current Transfer Static Ratio (HFE) at IC = -2 Ampere (A), VCE = -2 Volt (V) |
N/A 300 |
Maximum DC Current Transfer Static Ratio (HFE) at IC = -3 Ampere (A), VCE = -2 Volt (V) |
N/A 190 |
Maximum DC Current Transfer Static Ratio (HFE) at IC = -5 Ampere (A), VCE = -2 Volt (V) |
N/A 45 |
Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 0.5 Ampere (A), IB = 10 Milliampere (mA) |
N/A 35 mV |
Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 0.5 Ampere (A), IB = 10 Milliampere (mA) |
N/A 60 mV |
Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 1 Ampere (A), IB = 10 Milliampere (mA) |
N/A 70 mV |
Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 1 Ampere (A), IB = 10 Milliampere (mA) |
N/A 100 mV |
Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 3 Ampere (A), IB = 30 Milliampere (mA) |
N/A 180 mV |
Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 3 Ampere (A), IB = 30 Milliampere (mA) |
N/A 250 mV |
Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 5 Ampere (A), IB = 50 Milliampere (mA) |
N/A 250 mV |
Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 5 Ampere (A), IB = 50 Milliampere (mA) |
N/A 330 mV |
Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -100 Milliampere (mA), IB = -1.0 Milliampere (mA) |
N/A -60 mV |
Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -500 Milliampere (mA), IB = -5 Milliampere (mA) |
N/A -120 mV |
Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -1 Ampere (A), IB = -20 Milliampere (mA) |
N/A -140 mV |
Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -1.8 Ampere (A), IB = -70 Milliampere (mA) |
N/A -170 mV |
Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -3 Ampere (A), IB = -250 Milliampere (mA) |
N/A -200 mV |
Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -100 Milliampere (mA), IB = -1.0 Milliampere (mA) |
N/A -90 mV |
Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -500 Milliampere (mA), IB = -5 Milliampere (mA) |
N/A -180 mV |
Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -1 Ampere (A), IB = -20 Milliampere (mA) |
N/A -220 mV |
Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -1.8 Ampere (A), IB = -70 Milliampere (mA) |
N/A -260 mV |
Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -3 Ampere (A), IB = -250 Milliampere (mA) |
N/A -300 mV |
Typical Base-Emitter Saturation Voltage (VBE(sat)) at IC = -3 Ampere (mA), IB = -250 Milliampere (mA) |
N/A -985 mV |
Maximum Base-Emitter Saturation Voltage (VBE(sat)) at IC = -3 Ampere (mA), IB = -250 Milliampere (mA) |
N/A -1100 mV |
Typical Base-Emitter Turn-on Voltage (VBE(on)) at IC = -3 Ampere (mA), VCE = -2 Volt (V) |
N/A -850 mV |
Maximum Base-Emitter Turn-on Voltage (VBE(on)) at IC = -53 Ampere (mA), VCE = -2 Volt (V) |
N/A -1000 mV |
Typical Transitional Frequency (fT) at IC = -50 Milliampere (mA), VCE = -10 Volt (V), f = 50 Megahertz (MHz) |
N/A 145 MHz |
Maximum Output Capacitance (Cobo) at VCB = -10 Volt (V), f = 1 Megahertz (MHz) |
N/A 40 pF |
Typical Switching Time (tON) at VCC = -30 Volt (V), IC = -2 Ampere (A), IB = ±20 Milliampere (mA) |
N/A 170 ns |
Typical Switching Time (tOFF) at VCC = -30 Volt (V), IC = -2 Ampere (A), IB = ±20 Milliampere (mA) |
N/A 460 ns |
Features
Features |
N/A
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