Item # FZT1151ATA, PNP Medium Power Transistors On PUI

Unit of Measure

Specifications

Available	N/A {0}
Manufacturer Stock	N/A {0}
Brands	N/A Diodes Incorporated®
Manufacturer	N/A Diodes Incorporated�
Compliance	N/A AEC-Q101
Reel Size	N/A 7 in
Tape Width	N/A 12 mm
Terminals	N/A Finish - Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208
Low Saturation Voltage V_CE(sat) at -1 Ampere (A)	N/A -140 mV
Units Per Package	N/A 1000
Package Type	N/A Reel
Approximate Weight	N/A 0.112 g
Industry Standards	N/A Flammability: Underwriters Laboratories (UL) 94V-0 Restriction of Hazardous Substances (RoHS) Compliant

Mechanical Data

Case	N/A SOT223
Case Material	N/A Molded Plastic, "Green" Molding Compound.
Moisture Sensitivity	N/A Level 1 per J-STD-020

Absolute Maximum Ratings (T_amb = 25 Degree Celsius (ºC), Unless Otherwise Specified)

Collector-Base Voltage (V_CBO)	N/A -45 V
Collector-Emitter Voltage (V_CEO)	N/A -40 V
Emitter-Base Voltage (V_EBO)	N/A -7 V
Continuous Collector Current (I_C)	N/A -3 A
Peak Pulse Current (I_CM)	N/A -5 A
Power Dissipation (P_D)	N/A For a device mounted with the collector lead on 52 mm x 52 mm 2 oz copper that is on a single-sided 1.6 mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.: 3.0 W For a device mounted with the collector lead on 25 mm x 25 mm 2 oz copper that is on a single-sided 1.6 mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.: 2.0 W For a device mounted with the collector lead on 25 mm x 25 mm 1 oz copper that is on a single-sided 1.6 mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.: 1.6 W For a device mounted on minimum recommended pad layout device is measured under still air conditions whilst operating in a steady-state.: 1.2 W
Operating and Storage Temperature Range (T_J, T_STG)	N/A -55 to +150 ºC

Electrostatic Discharge (ESD) Ratings

Electrostatic Discharge - Human Body Model (ESD HBM)	N/A 4000 V
Electrostatic Discharge - Machine Model (ESD MM)	N/A 400 V

Electrical Characteristics (T_amb = 25 Degree Celsius (ºC), Unless Otherwise Specified)

Minimum Collector-Base Breakdown Voltage (BV_CBO) at I_C = -100 Microampere (μA)	N/A -45 V
Typical Collector-Base Breakdown Voltage (BV_CBO) at I_C = -100 Microampere (μA)	N/A -95 V
Minimum Collector-Emitter Breakdown Voltage (BV_CER) at I_C = -100 Microampere (μA)	N/A -40 V
Typical Collector-Emitter Breakdown Voltage (BV_CER) at I_C = -100 Microampere (μA)	N/A -90 V
Minimum Collector-Emitter Breakdown Voltage (BV_CEO) at I_C = -10 Milliampere (mA)	N/A -40 V
Typical Collector-Emitter Breakdown Voltage (BV_CEO) at I_C = -10 Milliampere (mA)	N/A -85 V
Minimum Collector-Emitter Breakdown Voltage (BV_CEV) at I_E = -100 Microampere (μA), V_EB = +1 Volt (V)	N/A -40 V
Typical Collector-Emitter Breakdown Voltage (BV_CEV) at I_E = -100 Microampere (μA), V_EB = +1 Volt (V)	N/A -90 V
Minimum Emitter-Base Breakdown Voltage (BV_EBO) at I_E = -100 Microampere (μA)	N/A -7 V
Typical Emitter-Base Breakdown Voltage (BV_EBO) at I_E = -100 Microampere (μA)	N/A -8.5 V
Typical Collector Cut Off Current (I_CBO) at V_CB = -36 Volt (V)	N/A -0.3 nA
Maximum Collector Cut Off Current (I_CBO) at V_CB = -36 Volt (V)	N/A -100 nA
Typical Emitter Cut Off Current (I_EBO) at V_EB = -4 Volt (V)	N/A -0.3 nA
Maximum Emitter Cut Off Current (I_EBO) at V_EB = -4 Volt (V)	N/A -100 nA
Typical Emitter Cut Off Current (I_EBO) at V_CE = -32 Volt (V)	N/A -0.3 nA
Maximum Emitter Cut Off Current (I_EBO) at V_CE = -32 Volt (V)	N/A -100 nA
Minimum DC Current Transfer Static Ratio (H_FE) at I_C = -10 Milliampere (mA), V_CE = -2 Volt (V)	N/A 270
Minimum DC Current Transfer Static Ratio (H_FE) at I_C = -500 Milliampere (mA), V_CE = -2 Volt (V)	N/A 250
Minimum DC Current Transfer Static Ratio (H_FE) at I_C = -2 Ampere (A), V_CE = -2 Volt (V)	N/A 180
Minimum DC Current Transfer Static Ratio (H_FE) at I_C = -3 Ampere (A), V_CE = -2 Volt (V)	N/A 100
Maximum DC Current Transfer Static Ratio (H_FE) at I_C = -10 Milliampere (mA), V_CE = -2 Volt (V)	N/A 450
Maximum DC Current Transfer Static Ratio (H_FE) at I_C = -500 Milliampere (mA), V_CE = -2 Volt (V)	N/A 400
Typical DC Current Transfer Static Ratio (H_FE) at I_C = -500 Milliampere (mA), V_CE = -2 Volt (V)	N/A 800
Maximum DC Current Transfer Static Ratio (H_FE) at I_C = -2 Ampere (A), V_CE = -2 Volt (V)	N/A 300
Maximum DC Current Transfer Static Ratio (H_FE) at I_C = -3 Ampere (A), V_CE = -2 Volt (V)	N/A 190
Maximum DC Current Transfer Static Ratio (H_FE) at I_C = -5 Ampere (A), V_CE = -2 Volt (V)	N/A 45
Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 0.5 Ampere (A), I_B = 10 Milliampere (mA)	N/A 35 mV
Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 0.5 Ampere (A), I_B = 10 Milliampere (mA)	N/A 60 mV
Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 1 Ampere (A), I_B = 10 Milliampere (mA)	N/A 70 mV
Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 1 Ampere (A), I_B = 10 Milliampere (mA)	N/A 100 mV
Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 3 Ampere (A), I_B = 30 Milliampere (mA)	N/A 180 mV
Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 3 Ampere (A), I_B = 30 Milliampere (mA)	N/A 250 mV
Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 5 Ampere (A), I_B = 50 Milliampere (mA)	N/A 250 mV
Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 5 Ampere (A), I_B = 50 Milliampere (mA)	N/A 330 mV
Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -100 Milliampere (mA), I_B = -1.0 Milliampere (mA)	N/A -60 mV
Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -500 Milliampere (mA), I_B = -5 Milliampere (mA)	N/A -120 mV
Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -1 Ampere (A), I_B = -20 Milliampere (mA)	N/A -140 mV
Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -1.8 Ampere (A), I_B = -70 Milliampere (mA)	N/A -170 mV
Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -3 Ampere (A), I_B = -250 Milliampere (mA)	N/A -200 mV
Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -100 Milliampere (mA), I_B = -1.0 Milliampere (mA)	N/A -90 mV
Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -500 Milliampere (mA), I_B = -5 Milliampere (mA)	N/A -180 mV
Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -1 Ampere (A), I_B = -20 Milliampere (mA)	N/A -220 mV
Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -1.8 Ampere (A), I_B = -70 Milliampere (mA)	N/A -260 mV
Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -3 Ampere (A), I_B = -250 Milliampere (mA)	N/A -300 mV
Typical Base-Emitter Saturation Voltage (V_BE(sat)) at I_C = -3 Ampere (mA), I_B = -250 Milliampere (mA)	N/A -985 mV
Maximum Base-Emitter Saturation Voltage (V_BE(sat)) at I_C = -3 Ampere (mA), I_B = -250 Milliampere (mA)	N/A -1100 mV
Typical Base-Emitter Turn-on Voltage (V_BE(on)) at I_C = -3 Ampere (mA), V_CE = -2 Volt (V)	N/A -850 mV
Maximum Base-Emitter Turn-on Voltage (V_BE(on)) at I_C = -53 Ampere (mA), V_CE = -2 Volt (V)	N/A -1000 mV
Typical Transitional Frequency (f_T) at I_C = -50 Milliampere (mA), V_CE = -10 Volt (V), f = 50 Megahertz (MHz)	N/A 145 MHz
Maximum Output Capacitance (C_obo) at V_CB = -10 Volt (V), f = 1 Megahertz (MHz)	N/A 40 pF
Typical Switching Time (t_ON) at V_CC = -30 Volt (V), I_C = -2 Ampere (A), I_B = ±20 Milliampere (mA)	N/A 170 ns
Typical Switching Time (t_OFF) at V_CC = -30 Volt (V), I_C = -2 Ampere (A), I_B = ±20 Milliampere (mA)	N/A 460 ns

Features

N/A

I_C = -3A High Continuous Collector Current
hFE Specified up to -5 A for a High Gain Hold-Up
Lead-Free Finish; RoHS Compliant:
EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
Halogen and Antimony Free. "Green" Device:
Halogen- and Antimony-free "Green" products are defined as those which contain < 900 ppm bromine, < 900 ppm chlorine (< 1500 ppm total Br + Cl) and < 1000 ppm antimony compounds.

Note

N/A Note for Collector-Emitter Breakdown Voltage, DC Current Transfer Static Ratio, Collector-Emitter Saturation Voltage, Base-Emitter Saturation Voltage, Base-Emitter Turn-on Voltage, Transitional Frequency:
Measured under pulsed conditions. Pulse width ≤ 300 μs. Duty cycle ≤ 2 %.

Specifications

Available

Manufacturer Stock

Brands

Manufacturer

Compliance

Reel Size

Tape Width

Terminals

Low Saturation Voltage VCE(sat) at -1 Ampere (A)

Units Per Package

Package Type

Approximate Weight

Industry Standards

Mechanical Data

Case

Case Material

Moisture Sensitivity

Absolute Maximum Ratings (Tamb = 25 Degree Celsius (ºC), Unless Otherwise Specified)

Collector-Base Voltage (VCBO)

Collector-Emitter Voltage (VCEO)

Emitter-Base Voltage (VEBO)

Continuous Collector Current (IC)

Peak Pulse Current (ICM)

Power Dissipation (PD)

Operating and Storage Temperature Range (TJ, TSTG)

Electrostatic Discharge (ESD) Ratings

Electrostatic Discharge - Human Body Model (ESD HBM)

Electrostatic Discharge - Machine Model (ESD MM)

Electrical Characteristics (Tamb = 25 Degree Celsius (ºC), Unless Otherwise Specified)

Minimum Collector-Base Breakdown Voltage (BVCBO) at IC = -100 Microampere (μA)

Typical Collector-Base Breakdown Voltage (BVCBO) at IC = -100 Microampere (μA)

Minimum Collector-Emitter Breakdown Voltage (BVCER) at IC = -100 Microampere (μA)

Typical Collector-Emitter Breakdown Voltage (BVCER) at IC = -100 Microampere (μA)

Minimum Collector-Emitter Breakdown Voltage (BVCEO) at IC = -10 Milliampere (mA)

Typical Collector-Emitter Breakdown Voltage (BVCEO) at IC = -10 Milliampere (mA)

Minimum Collector-Emitter Breakdown Voltage (BVCEV) at IE = -100 Microampere (μA), VEB = +1 Volt (V)

Typical Collector-Emitter Breakdown Voltage (BVCEV) at IE = -100 Microampere (μA), VEB = +1 Volt (V)

Minimum Emitter-Base Breakdown Voltage (BVEBO) at IE = -100 Microampere (μA)

Typical Emitter-Base Breakdown Voltage (BVEBO) at IE = -100 Microampere (μA)

Typical Collector Cut Off Current (ICBO) at VCB = -36 Volt (V)

Maximum Collector Cut Off Current (ICBO) at VCB = -36 Volt (V)

Typical Emitter Cut Off Current (IEBO) at VEB = -4 Volt (V)

Maximum Emitter Cut Off Current (IEBO) at VEB = -4 Volt (V)

Typical Emitter Cut Off Current (IEBO) at VCE = -32 Volt (V)

Maximum Emitter Cut Off Current (IEBO) at VCE = -32 Volt (V)

Minimum DC Current Transfer Static Ratio (HFE) at IC = -10 Milliampere (mA), VCE = -2 Volt (V)

Minimum DC Current Transfer Static Ratio (HFE) at IC = -500 Milliampere (mA), VCE = -2 Volt (V)

Minimum DC Current Transfer Static Ratio (HFE) at IC = -2 Ampere (A), VCE = -2 Volt (V)

Minimum DC Current Transfer Static Ratio (HFE) at IC = -3 Ampere (A), VCE = -2 Volt (V)

Maximum DC Current Transfer Static Ratio (HFE) at IC = -10 Milliampere (mA), VCE = -2 Volt (V)

Maximum DC Current Transfer Static Ratio (HFE) at IC = -500 Milliampere (mA), VCE = -2 Volt (V)

Typical DC Current Transfer Static Ratio (HFE) at IC = -500 Milliampere (mA), VCE = -2 Volt (V)

Maximum DC Current Transfer Static Ratio (HFE) at IC = -2 Ampere (A), VCE = -2 Volt (V)

Maximum DC Current Transfer Static Ratio (HFE) at IC = -3 Ampere (A), VCE = -2 Volt (V)

Maximum DC Current Transfer Static Ratio (HFE) at IC = -5 Ampere (A), VCE = -2 Volt (V)

Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 0.5 Ampere (A), IB = 10 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 0.5 Ampere (A), IB = 10 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 1 Ampere (A), IB = 10 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 1 Ampere (A), IB = 10 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 3 Ampere (A), IB = 30 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 3 Ampere (A), IB = 30 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 5 Ampere (A), IB = 50 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 5 Ampere (A), IB = 50 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -100 Milliampere (mA), IB = -1.0 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -500 Milliampere (mA), IB = -5 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -1 Ampere (A), IB = -20 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -1.8 Ampere (A), IB = -70 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -3 Ampere (A), IB = -250 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -100 Milliampere (mA), IB = -1.0 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -500 Milliampere (mA), IB = -5 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -1 Ampere (A), IB = -20 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -1.8 Ampere (A), IB = -70 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -3 Ampere (A), IB = -250 Milliampere (mA)

Typical Base-Emitter Saturation Voltage (VBE(sat)) at IC = -3 Ampere (mA), IB = -250 Milliampere (mA)

Maximum Base-Emitter Saturation Voltage (VBE(sat)) at IC = -3 Ampere (mA), IB = -250 Milliampere (mA)

Typical Base-Emitter Turn-on Voltage (VBE(on)) at IC = -3 Ampere (mA), VCE = -2 Volt (V)

Maximum Base-Emitter Turn-on Voltage (VBE(on)) at IC = -53 Ampere (mA), VCE = -2 Volt (V)

Typical Transitional Frequency (fT) at IC = -50 Milliampere (mA), VCE = -10 Volt (V), f = 50 Megahertz (MHz)

Maximum Output Capacitance (Cobo) at VCB = -10 Volt (V), f = 1 Megahertz (MHz)

Low Saturation Voltage V_CE(sat) at -1 Ampere (A)

Absolute Maximum Ratings (T_amb = 25 Degree Celsius (ºC), Unless Otherwise Specified)

Collector-Base Voltage (V_CBO)

Collector-Emitter Voltage (V_CEO)

Emitter-Base Voltage (V_EBO)

Continuous Collector Current (I_C)

Peak Pulse Current (I_CM)

Power Dissipation (P_D)

Operating and Storage Temperature Range (T_J, T_STG)

Electrical Characteristics (T_amb = 25 Degree Celsius (ºC), Unless Otherwise Specified)

Minimum Collector-Base Breakdown Voltage (BV_CBO) at I_C = -100 Microampere (μA)

Typical Collector-Base Breakdown Voltage (BV_CBO) at I_C = -100 Microampere (μA)

Minimum Collector-Emitter Breakdown Voltage (BV_CER) at I_C = -100 Microampere (μA)

Typical Collector-Emitter Breakdown Voltage (BV_CER) at I_C = -100 Microampere (μA)

Minimum Collector-Emitter Breakdown Voltage (BV_CEO) at I_C = -10 Milliampere (mA)

Typical Collector-Emitter Breakdown Voltage (BV_CEO) at I_C = -10 Milliampere (mA)

Minimum Collector-Emitter Breakdown Voltage (BV_CEV) at I_E = -100 Microampere (μA), V_EB = +1 Volt (V)

Typical Collector-Emitter Breakdown Voltage (BV_CEV) at I_E = -100 Microampere (μA), V_EB = +1 Volt (V)

Minimum Emitter-Base Breakdown Voltage (BV_EBO) at I_E = -100 Microampere (μA)

Typical Emitter-Base Breakdown Voltage (BV_EBO) at I_E = -100 Microampere (μA)

Typical Collector Cut Off Current (I_CBO) at V_CB = -36 Volt (V)

Maximum Collector Cut Off Current (I_CBO) at V_CB = -36 Volt (V)

Typical Emitter Cut Off Current (I_EBO) at V_EB = -4 Volt (V)

Maximum Emitter Cut Off Current (I_EBO) at V_EB = -4 Volt (V)

Typical Emitter Cut Off Current (I_EBO) at V_CE = -32 Volt (V)

Maximum Emitter Cut Off Current (I_EBO) at V_CE = -32 Volt (V)

Minimum DC Current Transfer Static Ratio (H_FE) at I_C = -10 Milliampere (mA), V_CE = -2 Volt (V)

Minimum DC Current Transfer Static Ratio (H_FE) at I_C = -500 Milliampere (mA), V_CE = -2 Volt (V)

Minimum DC Current Transfer Static Ratio (H_FE) at I_C = -2 Ampere (A), V_CE = -2 Volt (V)

Minimum DC Current Transfer Static Ratio (H_FE) at I_C = -3 Ampere (A), V_CE = -2 Volt (V)

Maximum DC Current Transfer Static Ratio (H_FE) at I_C = -10 Milliampere (mA), V_CE = -2 Volt (V)

Maximum DC Current Transfer Static Ratio (H_FE) at I_C = -500 Milliampere (mA), V_CE = -2 Volt (V)

Typical DC Current Transfer Static Ratio (H_FE) at I_C = -500 Milliampere (mA), V_CE = -2 Volt (V)

Maximum DC Current Transfer Static Ratio (H_FE) at I_C = -2 Ampere (A), V_CE = -2 Volt (V)

Maximum DC Current Transfer Static Ratio (H_FE) at I_C = -3 Ampere (A), V_CE = -2 Volt (V)

Maximum DC Current Transfer Static Ratio (H_FE) at I_C = -5 Ampere (A), V_CE = -2 Volt (V)

Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 0.5 Ampere (A), I_B = 10 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 0.5 Ampere (A), I_B = 10 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 1 Ampere (A), I_B = 10 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 1 Ampere (A), I_B = 10 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 3 Ampere (A), I_B = 30 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 3 Ampere (A), I_B = 30 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 5 Ampere (A), I_B = 50 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = 5 Ampere (A), I_B = 50 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -100 Milliampere (mA), I_B = -1.0 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -500 Milliampere (mA), I_B = -5 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -1 Ampere (A), I_B = -20 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -1.8 Ampere (A), I_B = -70 Milliampere (mA)

Typical Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -3 Ampere (A), I_B = -250 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -100 Milliampere (mA), I_B = -1.0 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -500 Milliampere (mA), I_B = -5 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -1 Ampere (A), I_B = -20 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -1.8 Ampere (A), I_B = -70 Milliampere (mA)

Maximum Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C = -3 Ampere (A), I_B = -250 Milliampere (mA)

Typical Base-Emitter Saturation Voltage (V_BE(sat)) at I_C = -3 Ampere (mA), I_B = -250 Milliampere (mA)

Maximum Base-Emitter Saturation Voltage (V_BE(sat)) at I_C = -3 Ampere (mA), I_B = -250 Milliampere (mA)

Typical Base-Emitter Turn-on Voltage (V_BE(on)) at I_C = -3 Ampere (mA), V_CE = -2 Volt (V)

Maximum Base-Emitter Turn-on Voltage (V_BE(on)) at I_C = -53 Ampere (mA), V_CE = -2 Volt (V)

Typical Transitional Frequency (f_T) at I_C = -50 Milliampere (mA), V_CE = -10 Volt (V), f = 50 Megahertz (MHz)

Maximum Output Capacitance (C_obo) at V_CB = -10 Volt (V), f = 1 Megahertz (MHz)

Typical Switching Time (t_ON) at V_CC = -30 Volt (V), I_C = -2 Ampere (A), I_B = ±20 Milliampere (mA)

Typical Switching Time (t_OFF) at V_CC = -30 Volt (V), I_C = -2 Ampere (A), I_B = ±20 Milliampere (mA)