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Switching and Linear Application DC And VHF Amplifier Applications
Unit of Measure

Specifications

Available

 N/A {0}

Manufacturer Stock

 N/A {0}

Brands

 N/A Solid State Inc.

Manufacturer

 N/A Solid State Inc.

Absolute Maximum Ratings

Collector-Emitter Voltage (VCEO)

 N/A 40 V

Collector-Base Voltage (VCBO)

 N/A 75 V

Emitter-Base Voltage (VEBO)

 N/A 6.0 V

Continuous Collector Current (IC)

 N/A 800 mA

Power Dissipation (PD) at TA = 25 Degree Celsius (ºC) Temperature

 N/A 500 mW

Power Dissipation (PD) at Derate Above 25 Degree Celsius (ºC) Temperature

 N/A 2.28 mW/ºC

Power Dissipation (PD) at Derate Above TC = 25 Degree Celsius (ºC) Temperature

 N/A 1.2 W

Derate Above 25 Degree Celsius (ºC) Temperature

 N/A 6.85 mW/ºC

Operating and Storage Junction Temperature Range (TJ, Tstg)

 N/A -65 to +200 ºC

Electrical Characteristics (at TA=25 Degree Celsius (ºC) Temperature Unless Otherwise Noted)

Test Condition for Collector-Emitter Voltage (VCEO)

 N/A IC=10 mA. IB=0

Test Condition for Collector-Base Voltage (VCBO)

 N/A IC=10 µA. IE=0

Test Condition for Emitter-Base Voltage (VEBO)

 N/A IE=10 µA, IC=0

Maximum Collector-Cut Off Current (ICBO)

 N/A 10 nA

Test Condition for Collector-Cut Off Current (ICBO)

 N/A VCB=10 µA. IE=0

Maximum Collector-Cut Off Current (ICBO) at Ta = 150 Degree Celsius (ºC) Temperature

 N/A 10 µA

Maximum Emitter-Cut Off Current (IEBO)

 N/A 10 nA

Test Condition for Emitter-Cut Off Current (IEBO)

 N/A VEB=3 V. IC=0

Maximum Base-Cut Off Current (IBL)

 N/A 20 nA

Test Condition for Base-Cut Off Current (IBL)

 N/A VCE=60 V. VEB=3 V

Maximum Saturated Collector Emitter Voltage VCE(Sat). at (IC =150 mA. IB= 15 mA)

 N/A 0.3 V

Maximum Saturated Collector Emitter Voltage VCE(Sat). at (IC =500 mA. IB= 50 mA)

 N/A 1.0 V

Maximum Saturated Base Emitter Voltage VBE(Sat). at (IC =150 mA. IB= 15 mA)

 N/A 0.6 to 1.2 V

Maximum Saturated Base Emitter Voltage VBE(Sat). at (IC =500 mA. IB= 50 mA)

 N/A 2.0 V

Direct Current Gain (hFE) (IC=0.1 mA, VCE=10V)

 N/A > 35

Direct Current Gain (hFE) (IC=1 mA, VCE=10V)

 N/A > 50

Direct Current Gain (hFE) (IC=10 mA, VCE=10V)

 N/A > 75

Direct Current Gain (hFE) at TA = 25 Degree Celsius (ºC) Temperature (IC=10 mA, VCE=10V)

 N/A > 35

Direct Current Gain (hFE) at TA = 25 Degree Celsius (ºC) Temperature (IC=150 mA, VCE=10V)

 N/A 100 to 300

Direct Current Gain (hFE) at TA = 25 Degree Celsius (ºC) Temperature (IC=150 mA, VCE=1V)

 N/A > 50

Direct Current Gain (hFE) at TA = 25 Degree Celsius (ºC) Temperature (IC=500 mA, VCE=10V)

 N/A > 35

Dynamic Characteristics

Small Signal Current Gain (hfe) at f = 1 kHz (IC=1 mA, VCE=10 V)

 N/A 50 to 300

Small Signal Current Gain (hfe) at f = 1 kHz (IC=10 mA, VCE=10 V)

 N/A 75 to 375

Input Impedance at f = 1 kHz ((IC=1 mA, VCE=10 V)

 N/A 2.0 to 8.0 kΩ

Input Impedance at f = 1 kHz ((IC=10 mA, VCE=10 V)

 N/A 0.25 to 1.25 kΩ

Voltage Feedback Ratio (hre) at f = 1 kHz ((IC=1 mA, VCE=10 V)

 N/A < 8.0

Voltage Feedback Ratio (hre) at f = 1 kHz ((IC=10mA, VCE=10 V)

 N/A < 4.0

Output Admittance (hoe) at f = 1 kHz ((IC=1 mA, VCE=10 V)

 N/A 5.0 to 35 µΩ

Output Admittance (hoe) at f = 1 kHz ((IC=10 mA, VCE=10 V)

 N/A 25 to 200 µΩ

Collector Base Time Constant (rb'cc) at f = 31.8 kHz ((IE=20 mA, VCB=20 V)

 N/A < 150 ps

Real Part Common-Emitter High Frequency Input Impedance (Re(hie)) at f = 300 MHz ((IC=20 mA, VCE=20 V)

 N/A < 60 Ω

Noise Figure (NF) at f = 1kHz (IC = 100 µA, VCE = 10 V, RS = 1 kΩ

 N/A < 4.0 dB

Transitional Frequency (fT) at IC = 20 Milliampere (A), VCE = 20 Volt (V), f = 100 Megahertz (MHz)

 N/A > 300 MHz

Output Capacitance (Cob) at VCB = 10 Volt (V), IE= 0, f = 100 Kilohertz (KHz)

 N/A < 8.0 pF

Input Capacitance (Cib) at VEB = 0.5 Volt (V), IC= 0, f = 100 Kilohertz (KHz)

 N/A < 25 pF

Delay Time ts at IC = 150 Milliampere (mA), IB1= 15 Milliampere (mA)

 N/A < 10 ns

Rise Time tr at VCC = 30 Volt (V), VBE = 0.5 Volt (V)

 N/A < 25 ns

Storage Time ts at IC = 150 Milliampere (mA), IB=0

 N/A < 225 ns

Fall Time tf at IB2= 15 Milliampere (mA), VCC = 30 Volt (V)

 N/A < 60 ns

Pulse Condition

Pulse Width

 N/A 300 µs

Duty Cycle

 N/A 2 %

Dimensions

Minimum Dimension A

 N/A 5.24 mm

Maximum Dimension A

 N/A 5.84 mm

Minimum Dimension B

 N/A 4.52 mm

Maximum Dimension B

 N/A 4.97 mm

Minimum Dimension C

 N/A 4.31 mm

Maximum Dimension C

 N/A 5.33 mm

Minimum Dimension D

 N/A 0.40 mm

Maximum Dimension D

 N/A 0.53 mm

Maximum Dimension E

 N/A 0.76 mm

Maximum Dimension F

 N/A 1.27 mm

Maximum Dimension G

 N/A 2.97 mm

Minimum Dimension H

 N/A 0.91 mm

Maximum Dimension H

 N/A 1.17 mm

Minimum Dimension J

 N/A 0.71 mm

Maximum Dimension J

 N/A 1.21 mm

Minimum Dimension K

 N/A 12.70 mm

Angle L

 N/A 45 º