Item # 2N2222A, Negative-Positive-Negative (NPN) Silicon Planar Switching Transistors On PUI

Unit of Measure

Specifications

Available	N/A {0}
Manufacturer Stock	N/A {0}
Brands	N/A Solid State Inc.
Manufacturer	N/A Solid State Inc.

Absolute Maximum Ratings

Collector-Emitter Voltage (V_CEO)	N/A 40 V
Collector-Base Voltage (V_CBO)	N/A 75 V
Emitter-Base Voltage (V_EBO)	N/A 6.0 V
Continuous Collector Current (I_C)	N/A 800 mA
Power Dissipation (P_D) at T_A = 25 Degree Celsius (ºC) Temperature	N/A 500 mW
Power Dissipation (P_D) at Derate Above 25 Degree Celsius (ºC) Temperature	N/A 2.28 mW/ºC
Power Dissipation (P_D) at Derate Above T_C = 25 Degree Celsius (ºC) Temperature	N/A 1.2 W
Derate Above 25 Degree Celsius (ºC) Temperature	N/A 6.85 mW/ºC
Operating and Storage Junction Temperature Range (T_J, T_stg)	N/A -65 to +200 ºC

Electrical Characteristics (at T_A=25 Degree Celsius (ºC) Temperature Unless Otherwise Noted)

Test Condition for Collector-Emitter Voltage (V_CEO)	N/A I_C=10 mA. I_B=0
Test Condition for Collector-Base Voltage (V_CBO)	N/A I_C=10 µA. I_E=0
Test Condition for Emitter-Base Voltage (V_EBO)	N/A I_E=10 µA, I_C=0
Maximum Collector-Cut Off Current (I_CBO)	N/A 10 nA
Test Condition for Collector-Cut Off Current (I_CBO)	N/A V_CB=10 µA. I_E=0
Maximum Collector-Cut Off Current (I_CBO) at T_a = 150 Degree Celsius (ºC) Temperature	N/A 10 µA
Maximum Emitter-Cut Off Current (I_EBO)	N/A 10 nA
Test Condition for Emitter-Cut Off Current (I_EBO)	N/A V_EB=3 V. I_C=0
Maximum Base-Cut Off Current (I_BL)	N/A 20 nA
Test Condition for Base-Cut Off Current (I_BL)	N/A V_CE=60 V. V_EB=3 V
Maximum Saturated Collector Emitter Voltage V_CE(Sat)^. at (I_C =150 mA. I_B= 15 mA)	N/A 0.3 V
Maximum Saturated Collector Emitter Voltage V_CE(Sat)^. at (I_C =500 mA. I_B= 50 mA)	N/A 1.0 V
Maximum Saturated Base Emitter Voltage V_BE(Sat)^. at (I_C =150 mA. I_B= 15 mA)	N/A 0.6 to 1.2 V
Maximum Saturated Base Emitter Voltage V_BE(Sat)^. at (I_C =500 mA. I_B= 50 mA)	N/A 2.0 V
Direct Current Gain (hFE) (I_C=0.1 mA, V_CE=10V)	N/A > 35
Direct Current Gain (hFE) (I_C=1 mA, V_CE=10V)	N/A > 50
Direct Current Gain (hFE) (I_C=10 mA, V_CE=10V)	N/A > 75
Direct Current Gain (hFE) at T_A = 25 Degree Celsius (ºC) Temperature (I_C=10 mA, V_CE=10V)	N/A > 35
Direct Current Gain (hFE) at T_A = 25 Degree Celsius (ºC) Temperature (I_C=150 mA, V_CE=10V)	N/A 100 to 300
Direct Current Gain (hFE) at T_A = 25 Degree Celsius (ºC) Temperature (I_C=150 mA, V_CE=1V)	N/A > 50
Direct Current Gain (hFE) at T_A = 25 Degree Celsius (ºC) Temperature (I_C=500 mA, V_CE=10V)	N/A > 35

Dynamic Characteristics

Small Signal Current Gain (hfe) at f = 1 kHz (I_C=1 mA, V_CE=10 V)	N/A 50 to 300
Small Signal Current Gain (hfe) at f = 1 kHz (I_C=10 mA, V_CE=10 V)	N/A 75 to 375
Input Impedance at f = 1 kHz ((I_C=1 mA, V_CE=10 V)	N/A 2.0 to 8.0 kΩ
Input Impedance at f = 1 kHz ((I_C=10 mA, V_CE=10 V)	N/A 0.25 to 1.25 kΩ
Voltage Feedback Ratio (hre) at f = 1 kHz ((I_C=1 mA, V_CE=10 V)	N/A < 8.0
Voltage Feedback Ratio (hre) at f = 1 kHz ((I_C=10mA, V_CE=10 V)	N/A < 4.0
Output Admittance (hoe) at f = 1 kHz ((I_C=1 mA, V_CE=10 V)	N/A 5.0 to 35 µΩ
Output Admittance (hoe) at f = 1 kHz ((I_C=10 mA, V_CE=10 V)	N/A 25 to 200 µΩ
Collector Base Time Constant (rb'cc) at f = 31.8 kHz ((I_E=20 mA, V_CB=20 V)	N/A < 150 ps
Real Part Common-Emitter High Frequency Input Impedance (R_e(hie)) at f = 300 MHz ((I_C=20 mA, V_CE=20 V)	N/A < 60 Ω
Noise Figure (N_F) at f = 1kHz (I_C = 100 µA, V_CE = 10 V, R_S = 1 kΩ	N/A < 4.0 dB
Transitional Frequency (f_T) at I_C = 20 Milliampere (A), V_CE = 20 Volt (V), f = 100 Megahertz (MHz)	N/A > 300 MHz
Output Capacitance (C_ob) at V_CB = 10 Volt (V), I_E= 0, f = 100 Kilohertz (KHz)	N/A < 8.0 pF
Input Capacitance (C_ib) at V_EB = 0.5 Volt (V), I_C= 0, f = 100 Kilohertz (KHz)	N/A < 25 pF
Delay Time t_s at I_C = 150 Milliampere (mA), I_B1= 15 Milliampere (mA)	N/A < 10 ns
Rise Time t_r at V_CC = 30 Volt (V), V_BE = 0.5 Volt (V)	N/A < 25 ns
Storage Time t_s at I_C = 150 Milliampere (mA), I_B=0	N/A < 225 ns
Fall Time t_f at I_B2= 15 Milliampere (mA), V_CC = 30 Volt (V)	N/A < 60 ns

Pulse Condition

Pulse Width	N/A 300 µs
Duty Cycle	N/A 2 %

Dimensions

Minimum Dimension A	N/A 5.24 mm
Maximum Dimension A	N/A 5.84 mm
Minimum Dimension B	N/A 4.52 mm
Maximum Dimension B	N/A 4.97 mm
Minimum Dimension C	N/A 4.31 mm
Maximum Dimension C	N/A 5.33 mm
Minimum Dimension D	N/A 0.40 mm
Maximum Dimension D	N/A 0.53 mm
Maximum Dimension E	N/A 0.76 mm
Maximum Dimension F	N/A 1.27 mm
Maximum Dimension G	N/A 2.97 mm
Minimum Dimension H	N/A 0.91 mm
Maximum Dimension H	N/A 1.17 mm
Minimum Dimension J	N/A 0.71 mm
Maximum Dimension J	N/A 1.21 mm
Minimum Dimension K	N/A 12.70 mm
Angle L	N/A 45 º

Specifications

Available

Manufacturer Stock

Brands

Manufacturer

Absolute Maximum Ratings

Collector-Emitter Voltage (VCEO)

Collector-Base Voltage (VCBO)

Emitter-Base Voltage (VEBO)

Continuous Collector Current (IC)

Power Dissipation (PD) at TA = 25 Degree Celsius (ºC) Temperature

Power Dissipation (PD) at Derate Above 25 Degree Celsius (ºC) Temperature

Power Dissipation (PD) at Derate Above TC = 25 Degree Celsius (ºC) Temperature

Derate Above 25 Degree Celsius (ºC) Temperature

Operating and Storage Junction Temperature Range (TJ, Tstg)

Electrical Characteristics (at TA=25 Degree Celsius (ºC) Temperature Unless Otherwise Noted)

Test Condition for Collector-Emitter Voltage (VCEO)

Test Condition for Collector-Base Voltage (VCBO)

Test Condition for Emitter-Base Voltage (VEBO)

Maximum Collector-Cut Off Current (ICBO)

Test Condition for Collector-Cut Off Current (ICBO)

Maximum Collector-Cut Off Current (ICBO) at Ta = 150 Degree Celsius (ºC) Temperature

Maximum Emitter-Cut Off Current (IEBO)

Test Condition for Emitter-Cut Off Current (IEBO)

Maximum Base-Cut Off Current (IBL)

Test Condition for Base-Cut Off Current (IBL)

Maximum Saturated Collector Emitter Voltage VCE(Sat). at (IC =150 mA. IB= 15 mA)

Maximum Saturated Collector Emitter Voltage VCE(Sat). at (IC =500 mA. IB= 50 mA)

Maximum Saturated Base Emitter Voltage VBE(Sat). at (IC =150 mA. IB= 15 mA)

Maximum Saturated Base Emitter Voltage VBE(Sat). at (IC =500 mA. IB= 50 mA)

Direct Current Gain (hFE) (IC=0.1 mA, VCE=10V)

Direct Current Gain (hFE) (IC=1 mA, VCE=10V)

Direct Current Gain (hFE) (IC=10 mA, VCE=10V)

Direct Current Gain (hFE) at TA = 25 Degree Celsius (ºC) Temperature (IC=10 mA, VCE=10V)

Direct Current Gain (hFE) at TA = 25 Degree Celsius (ºC) Temperature (IC=150 mA, VCE=10V)

Direct Current Gain (hFE) at TA = 25 Degree Celsius (ºC) Temperature (IC=150 mA, VCE=1V)

Direct Current Gain (hFE) at TA = 25 Degree Celsius (ºC) Temperature (IC=500 mA, VCE=10V)

Dynamic Characteristics

Small Signal Current Gain (hfe) at f = 1 kHz (IC=1 mA, VCE=10 V)

Small Signal Current Gain (hfe) at f = 1 kHz (IC=10 mA, VCE=10 V)

Input Impedance at f = 1 kHz ((IC=1 mA, VCE=10 V)

Input Impedance at f = 1 kHz ((IC=10 mA, VCE=10 V)

Voltage Feedback Ratio (hre) at f = 1 kHz ((IC=1 mA, VCE=10 V)

Voltage Feedback Ratio (hre) at f = 1 kHz ((IC=10mA, VCE=10 V)

Output Admittance (hoe) at f = 1 kHz ((IC=1 mA, VCE=10 V)

Output Admittance (hoe) at f = 1 kHz ((IC=10 mA, VCE=10 V)

Collector Base Time Constant (rb'cc) at f = 31.8 kHz ((IE=20 mA, VCB=20 V)

Real Part Common-Emitter High Frequency Input Impedance (Re(hie)) at f = 300 MHz ((IC=20 mA, VCE=20 V)

Noise Figure (NF) at f = 1kHz (IC = 100 µA, VCE = 10 V, RS = 1 kΩ

Transitional Frequency (fT) at IC = 20 Milliampere (A), VCE = 20 Volt (V), f = 100 Megahertz (MHz)

Output Capacitance (Cob) at VCB = 10 Volt (V), IE= 0, f = 100 Kilohertz (KHz)

Input Capacitance (Cib) at VEB = 0.5 Volt (V), IC= 0, f = 100 Kilohertz (KHz)

Delay Time ts at IC = 150 Milliampere (mA), IB1= 15 Milliampere (mA)

Rise Time tr at VCC = 30 Volt (V), VBE = 0.5 Volt (V)

Storage Time ts at IC = 150 Milliampere (mA), IB=0

Fall Time tf at IB2= 15 Milliampere (mA), VCC = 30 Volt (V)

Pulse Condition

Pulse Width

Duty Cycle

Dimensions

Minimum Dimension A

Maximum Dimension A

Minimum Dimension B

Maximum Dimension B

Minimum Dimension C

Maximum Dimension C

Minimum Dimension D

Maximum Dimension D

Maximum Dimension E

Maximum Dimension F

Maximum Dimension G

Minimum Dimension H

Maximum Dimension H

Minimum Dimension J

Maximum Dimension J

Minimum Dimension K

Angle L

Collector-Emitter Voltage (V_CEO)

Collector-Base Voltage (V_CBO)

Emitter-Base Voltage (V_EBO)

Continuous Collector Current (I_C)

Power Dissipation (P_D) at T_A = 25 Degree Celsius (ºC) Temperature

Power Dissipation (P_D) at Derate Above 25 Degree Celsius (ºC) Temperature

Power Dissipation (P_D) at Derate Above T_C = 25 Degree Celsius (ºC) Temperature

Operating and Storage Junction Temperature Range (T_J, T_stg)

Electrical Characteristics (at T_A=25 Degree Celsius (ºC) Temperature Unless Otherwise Noted)

Test Condition for Collector-Emitter Voltage (V_CEO)

Test Condition for Collector-Base Voltage (V_CBO)

Test Condition for Emitter-Base Voltage (V_EBO)

Maximum Collector-Cut Off Current (I_CBO)

Test Condition for Collector-Cut Off Current (I_CBO)

Maximum Collector-Cut Off Current (I_CBO) at T_a = 150 Degree Celsius (ºC) Temperature

Maximum Emitter-Cut Off Current (I_EBO)

Test Condition for Emitter-Cut Off Current (I_EBO)

Maximum Base-Cut Off Current (I_BL)

Test Condition for Base-Cut Off Current (I_BL)

Maximum Saturated Collector Emitter Voltage V_CE(Sat)^. at (I_C =150 mA. I_B= 15 mA)

Maximum Saturated Collector Emitter Voltage V_CE(Sat)^. at (I_C =500 mA. I_B= 50 mA)

Maximum Saturated Base Emitter Voltage V_BE(Sat)^. at (I_C =150 mA. I_B= 15 mA)

Maximum Saturated Base Emitter Voltage V_BE(Sat)^. at (I_C =500 mA. I_B= 50 mA)

Direct Current Gain (hFE) (I_C=0.1 mA, V_CE=10V)

Direct Current Gain (hFE) (I_C=1 mA, V_CE=10V)

Direct Current Gain (hFE) (I_C=10 mA, V_CE=10V)

Direct Current Gain (hFE) at T_A = 25 Degree Celsius (ºC) Temperature (I_C=10 mA, V_CE=10V)

Direct Current Gain (hFE) at T_A = 25 Degree Celsius (ºC) Temperature (I_C=150 mA, V_CE=10V)

Direct Current Gain (hFE) at T_A = 25 Degree Celsius (ºC) Temperature (I_C=150 mA, V_CE=1V)

Direct Current Gain (hFE) at T_A = 25 Degree Celsius (ºC) Temperature (I_C=500 mA, V_CE=10V)

Small Signal Current Gain (hfe) at f = 1 kHz (I_C=1 mA, V_CE=10 V)

Small Signal Current Gain (hfe) at f = 1 kHz (I_C=10 mA, V_CE=10 V)

Input Impedance at f = 1 kHz ((I_C=1 mA, V_CE=10 V)

Input Impedance at f = 1 kHz ((I_C=10 mA, V_CE=10 V)

Voltage Feedback Ratio (hre) at f = 1 kHz ((I_C=1 mA, V_CE=10 V)

Voltage Feedback Ratio (hre) at f = 1 kHz ((I_C=10mA, V_CE=10 V)

Output Admittance (hoe) at f = 1 kHz ((I_C=1 mA, V_CE=10 V)

Output Admittance (hoe) at f = 1 kHz ((I_C=10 mA, V_CE=10 V)

Collector Base Time Constant (rb'cc) at f = 31.8 kHz ((I_E=20 mA, V_CB=20 V)

Real Part Common-Emitter High Frequency Input Impedance (R_e(hie)) at f = 300 MHz ((I_C=20 mA, V_CE=20 V)

Noise Figure (N_F) at f = 1kHz (I_C = 100 µA, V_CE = 10 V, R_S = 1 kΩ

Transitional Frequency (f_T) at I_C = 20 Milliampere (A), V_CE = 20 Volt (V), f = 100 Megahertz (MHz)

Output Capacitance (C_ob) at V_CB = 10 Volt (V), I_E= 0, f = 100 Kilohertz (KHz)

Input Capacitance (C_ib) at V_EB = 0.5 Volt (V), I_C= 0, f = 100 Kilohertz (KHz)

Delay Time t_s at I_C = 150 Milliampere (mA), I_B1= 15 Milliampere (mA)

Rise Time t_r at V_CC = 30 Volt (V), V_BE = 0.5 Volt (V)

Storage Time t_s at I_C = 150 Milliampere (mA), I_B=0

Fall Time t_f at I_B2= 15 Milliampere (mA), V_CC = 30 Volt (V)