Available |
N/A {0} |
Manufacturer Stock |
N/A {0} |
Brands |
N/A Diodes Incorporated® |
Manufacturer |
N/A Diodes Incorporated� |
Packaging |
N/A 3000/Tape & Reel |
Approximate Weight |
N/A 0.01 g |
Industry Standards |
N/A Flammability: Underwriters Laboratories (UL) 94V-0 Restriction of Hazardous Substances (RoHS) Compliant |
Case |
N/A SOD123 |
Material |
N/A Molded Plastic |
Moisture Sensitivity |
N/A Level 1 per J-STD-020 |
Polarity |
N/A Cathode Band |
Leads |
N/A Matte Tin Finish Annealed over Alloy 42 Lead frame (Lead Free Plating) Solderable per MIL-STD-202, Method 208 |
Peak Repetitive Reverse Voltage (VRRM) at IR = 1.0 Milliampere (mA) |
N/A 40 V |
Working Peak Reverse Voltage (VRWM) at IR = 1.0 Milliampere (mA) |
N/A 40 V |
Direct Current (DC) Blocking Voltage (VR) at IR = 1.0 Milliampere (mA) |
N/A 40 V |
Average Rectified Output Current (IO) |
N/A 1 A |
Repetitive Peak Forward Current (IFRM) tp ≤ 1 Millisecond (ms), δ ≤ 0.5 (IFRM |
N/A 1.5 A |
Non-Repetitive Peak Forward Surge Current (IFSM) 8.3 Millisecond (ms) Single Half Sine-Wave Superimposed on Rated Load |
N/A 25 A |
Power Dissipation (PD) |
N/A 450 mW |
Typical Thermal Resistance Junction to Ambient (RθJA |
N/A 222 ºC/W |
Operating and Storage Temperature Range (TJ, TSTG) |
N/A -6 to +125 ºC |
Minimum Reverse Breakdown Voltage (V(BR)R) at IR = 1.0 Milliampere (mA) |
N/A 40 V |
Maximum Forward Voltage (VF) at IF = 0.1 Ampere (A) |
N/A 0.320 V |
Maximum Forward Voltage (VF) at IF = 1.0 Ampere (A) |
N/A 0.450 V |
Maximum Forward Voltage (VF) at IF = 3.0 Ampere (A) |
N/A 0.750 V |
Typical Reverse Leakage Current (IR) at VR = 4 V, TA = +25 Degree Celsius (ºC) Temperature |
N/A 10 µA |
Typical Reverse Leakage Current (IR) at VR = 4 V, TA = +100 Degree Celsius (ºC) Temperature |
N/A 1 mA |
Typical Reverse Leakage Current (IR) at VR = 6 V, TA = +25 Degree Celsius (ºC) Temperature |
N/A 15 µA |
Typical Reverse Leakage Current (IR) at VR = 6 V, TA = +100 Degree Celsius (ºC) Temperature |
N/A 1.5 mA |
Maximum Reverse Leakage Current (IR) at VR = 40 V, TA = +25 Degree Celsius (ºC) Temperature |
N/A 1 mA |
Maximum Reverse Leakage Current (IR) at VR = 40 V, TA = +100 Degree Celsius (ºC) Temperature |
N/A 10 mA |
Maximum Reverse Leakage Current (IR) at VR = 4 V, TA = +25 Degree Celsius (ºC) Temperature |
N/A 50 µA |
Maximum Reverse Leakage Current (IR) at VR = 4 V, TA = +100 Degree Celsius (ºC) Temperature |
N/A 2 mA |
Maximum Reverse Leakage Current (IR) at VR = 6 V, TA = +25 Degree Celsius (ºC) Temperature |
N/A 75 µA |
Maximum Reverse Leakage Current (IR) at VR = 6 V, TA = +100 Degree Celsius (ºC) Temperature |
N/A 3 mA |
Typical Total Capacitance (CT) at VR = 4 V, f = 1.0 Megahertz (MHz) |
N/A 50 pF |
Maximum Total Capacitance (CT) at VR = 4 V, f = 1.0 Megahertz (MHz) |
N/A 60 pF |
Features and Benefits |
N/A
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Applications |
N/A
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Note |
N/A
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