C147 Silicon Controlled Rectifier is designed for phase control applications. This is an all-diffused device which is considerably smaller in size than comparably rated high power SCR's.
Unit of Measure
Specifications
Available |
N/A {0} |
Manufacturer Stock |
N/A {0} |
Brands |
N/A Solid State Inc. |
Manufacturer |
N/A Solid State Inc. |
Repetitive Peak Off-State Voltage (VDRM) at TJ= -40 to +125 Degree Celsius (ºC) Temperature1 | N/A 200 V |
Repetitive Peak Reverse Voltage (VRRM) at TJ= -40 to +125 Degree Celsius (ºC) Temperature2 | N/A 200 V |
Non-Repetitive Peak Reverse Voltage (VRSM) at TJ= +125 Degree Celsius (ºC) Temperature3 | N/A 300 V |
Root Mean Square (RMS) On-State Current (IT(RMS))4 | N/A 63 A |
Critical Rate-of -Rise of On-State Non-Repetitive Current di/dt (Switching from 1200 Volt (V) Voltage)5 | N/A 100 A/µs |
Critical Rate-of -Rise of On-State Non-Repetitive Current di/dt (Switching from 600 Volt (V) Voltage)6 | N/A 200 A/µs |
Peak One-Cycle Surge On-State Non-Repetitive Current (ITSM) at 60 Hertz (Hz) Frequency |
N/A 1000 A |
Peak One-Cycle Surge On-State Non-Repetitive Current (ITSM) at 50 Hertz (Hz) Frequency |
N/A 910 A |
Maximum Allowable Non-Repetitive Surge Current (I2t) for Fusing, For Times ≥ 8.3 Milliseconds (ms) |
N/A 4150 (RMS Ampere)2 S |
Maximum Allowable Non-Repetitive Surge Current (I2t) for Fusing, For Times ≥ 1.5 Milliseconds (ms) |
N/A 2850 (RMS Ampere)2 S |
Peak Gate Power Dissipation (PGM) for 150 Microseconds (µs) |
N/A 100 W |
Average Gate Power Dissipation (PG(AV)) |
N/A 2 W |
Storage Temperature Range (TSTG) |
N/A -40 to +150 ºC |
Operating Temperature (TJ) |
N/A -40 to +125 ºC |
Maximum Stud Torque |
N/A 30 lb·in3.4 N·m |
- 1 Half sinewave waveform, 10 msec maximum pulse width.
- 2 Half sinewave waveform, 10 msec maximum pulse width.
- 3 Half sinewave waveform, 10 msec maximum pulse width.
- 4 All Conduction Angles
- 5 di/dt ratings established in accordance with EIA-NEMA Standard RS-397.
- 6 di/dt ratings established in accordance with EIA-NEMA Standard RS-397.
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