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BIVAR? Surface Mount 1210 package Bi-Color LED combines two chips in a single package. They are ideal for small scale applications where multiple signals need to be displayed. When needed, the third color can be created by powering up both chips together. BIVAR? offers water clear LED lens for high luminous intensity and wide viewing angles. Wide variety of color and intensity combinations are available to meet any illumination need. The SM1210 LED is packaged in standard tape and reels for pick and place assemblies.
Unit of Measure

Specifications

Available

 N/A {0}

Manufacturer Stock

 N/A {0}

Brands

 N/A BIVAR®

Manufacturer

 N/A BIVAR�

Material

 N/A Aluminum Gallium Arsenide (AlGaAs) Gallium Phosphide (GaP)

Emitted Color for Aluminium Gallium Arsenide (AlGaAs)

 N/A Red

Emitted Color for Gallium Phosphide (GaP)

 N/A Green

Typical Peak Wave Length for Aluminum Gallium Arsenide (AlGaAs)

 N/A 660 nm

Typical Peak Wave Length for Gallium Phosphide (GaP)

 N/A 568 nm

Lens Appearance

 N/A Water Clear

Absolute Maximum Ratings (Ta)

 N/A 25 ºC

Forward Current (IF)

 N/A 20 mA
Standard Tolerance (±)1 N/A 0.010 in

Industry Standards

 N/A Restriction of Hazardous Substances (RoHS) Compliant

Absolute Maximum Ratings

Power Dissipation (Red)

 N/A 69 mW

Power Dissipation (Yellow)

 N/A 78 mW

Forward Current (DC)

 N/A 30 mA
Peak Forward Current2 N/A 100 mA

Reverse Voltage

 N/A 5 V

Operating Temperature Range

 N/A -30 ~ +80 ºC

Storage Temperature Range

 N/A -40 ~ +85 ºC
Lead Soldering Temperature3 N/A 260 ºC

Electrical/Optical Characteristics

Typical Forward Voltage (Vf) for Aluminium Gallium Arsenide (AlGaAs)

 N/A 1.85 V

Typical Forward Voltage (Vf) for Gallium Phosphide (GaP)

 N/A 2.3 V

Maximum Forward Voltage (Vf) for Aluminium Gallium Arsenide (AlGaAs)

 N/A 2.3 V

Maximum Forward Voltage (Vf) for Gallium Phosphide (GaP)

 N/A 2.6 V

Forward Voltage Tolerance (±)

 N/A 0.05 V

Typical Recommended Forward Current

 N/A 20 mA

Reverse Current

 N/A 10 µA

Dominant Wavelength for Aluminum Gallium Arsenide (AlGaAs)

 N/A 643 nm

Dominant Wavelength for Gallium Phosphide (GaP)

 N/A 570 nm

Dominant Aavelength Tolerance (±)

 N/A 1 nm

Minimum Luminous Intensity (Iv) for Aluminum Gallium Arsenide (AlGaAs)

 N/A 6 mcd

Minimum Luminous Intensity (Iv) for Gallium Phosphide (GaP)

 N/A 8 mcd

Typical Luminous Intensity (Iv)

 N/A 15 mcd

Typical Viewing Angle (2 θ 1/2)

 N/A 130 º

Features

Features

 N/A
  • Industry Standard Package
  • Two Chips in One Package
  • Water Clear Lens
  • Wide Viewing Angle
  • Ideal for Status Indication and Lighting
  • 1 Unless otherwise noted.
  • 2 10 % Duty Cycle, Pulse Width ≤ 0.1 msec.
  • 3 3 mm from the base of the epoxy bulb.
    Solder time less than 5 seconds at temperature extreme.