Available |
N/A {0} |
Manufacturer Stock |
N/A {0} |
Brands |
N/A Diodes Incorporated® |
Manufacturer |
N/A Diodes Incorporated� |
Compliance |
N/A AEC-Q101 |
Reel Size |
N/A 7 in |
Tape Width |
N/A 12 mm |
Quantity Per Reel |
N/A 1000 |
Terminals |
N/A Finish - Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 |
Low Saturation Voltage VCE(sat) at 1 Ampere (A) |
N/A < 70 mV |
Industry Standards |
N/A Flammability: Underwriters Laboratories (UL) 94V-0 Restriction of Hazardous Substances (RoHS) Compliant |
Approximate Weight |
N/A 0.112 g |
Case |
N/A SOT223 |
Case Material |
N/A Molded Plastic, "Green" Molding Compound. |
Moisture Sensitivity |
N/A Level 1 per J-STD-020 |
Collector-Base Voltage (VCBO) |
N/A 80 V |
Collector-Emitter Voltage (VCEO) |
N/A 25 V |
Emitter-Base Voltage (VEBO) |
N/A 7 V |
Continuous Collector Current (IC) |
N/A 5 A |
Peak Pulse Current (ICM) |
N/A 20 A |
Power Dissipation (PD) |
N/A
For a device mounted with the collector lead on 52 mm x 52 mm 2 oz copper that is on a single-sided 1.6 mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.: 3.0 W For a device mounted with the collector lead on 25 mm x 25 mm 2 oz copper that is on a single-sided 1.6 mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.: 2.0 W For a device mounted with the collector lead on 25 mm x 25 mm 1 oz copper that is on a single-sided 1.6 mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.: 1.6 W For a device mounted on minimum recommended pad layout device is measured under still air conditions whilst operating in a steady-state.: 1.2 W |
Thermal Resistance, Junction to Ambient (RθJA) |
N/A
For a device mounted with the collector lead on 52 mm x 52 mm 2 oz copper that is on a single-sided 1.6 mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.: 41.7 ºC/W For a device mounted with the collector lea |
Operating and Storage Temperature Range (TJ, TSTG) |
N/A -55 to +150 ºC |
Electrostatic Discharge - Human Body Model (ESD HBM) |
N/A 4000 V |
Electrostatic Discharge - Machine Model (ESD MM) |
N/A 400 V |
Minimum Collector-Base Breakdown Voltage (BVCBO) at IC = 100 Microampere (μA) |
N/A 80 V |
Typical Collector-Base Breakdown Voltage (BVCBO) at IC = 100 Microampere (μA) |
N/A 130 V |
Minimum Collector-Emitter Breakdown Voltage (BVCER) at IC = 100 Microampere (μA) |
N/A 80 V |
Typical Collector-Emitter Breakdown Voltage (BVCER) at IC = 100 Microampere (μA) |
N/A 130 V |
Minimum Collector-Emitter Breakdown Voltage (BVCEO) at IC = 10 Milliampere (mA) |
N/A 25 V |
Typical Collector-Emitter Breakdown Voltage (BVCEO) at IC = 10 Milliampere (mA) |
N/A 30 V |
Minimum Emitter-Base Breakdown Voltage (BVEBO) at IE = 100 Microampere (μA) |
N/A 7 V |
Typical Emitter-Base Breakdown Voltage (BVEBO) at IE = 100 Microampere (μA) |
N/A 9 V |
Typical Collector Cut Off Current (ICBO) at VCB = 35 Volt (V) |
N/A 0.3 nA |
Maximum Collector Cut Off Current (ICBO) at VCB = 35 Volt (V) |
N/A 10 nA |
Typical Emitter Cut Off Current (IEBO) at VEB = 4 Volt (V) |
N/A 0.3 nA |
Maximum Emitter Cut Off Current (IEBO) at VEB = 4 Volt (V) |
N/A 10 nA |
Minimum DC Current Transfer Static Ratio (HFE) at IC = 10 Milliampere (mA), VCE = 2 Volt (V) |
N/A 280 |
Typical DC Current Transfer Static Ratio (HFE) at IC = 10 Milliampere (mA), VCE = 2 Volt (V) |
N/A 440 |
Minimum DC Current Transfer Static Ratio (HFE) at IC = 0.5 Ampere (A), VCE = 2 Volt (V) |
N/A 300 |
Typical DC Current Transfer Static Ratio (HFE) at IC = 0.5 Ampere (A), VCE = 2 Volt (V) |
N/A 450 |
Minimum DC Current Transfer Static Ratio (HFE) at IC = 1 Ampere (A), VCE = 2 Volt (V) |
N/A 300 |
Typical DC Current Transfer Static Ratio (HFE) at IC = 1 Ampere (A), VCE = 2 Volt (V) |
N/A 450 |
Maximum DC Current Transfer Static Ratio (HFE) at IC = 1 Ampere (A), VCE = 2 Volt (V) |
N/A 1200 |
Minimum DC Current Transfer Static Ratio (HFE) at IC = -5 Ampere (A), VCE = 2 Volt (V) |
N/A 180 |
Typical DC Current Transfer Static Ratio (HFE) at IC = -5 Ampere (A), VCE = 2 Volt (V) |
N/A 280 |
Minimum DC Current Transfer Static Ratio (HFE) at IC = 20 Ampere (A), VCE = 2 Volt (V) |
N/A 40 |
Typical DC Current Transfer Static Ratio (HFE) at IC = 20 Ampere (A), VCE = 2 Volt (V) |
N/A 80 |
Typical Base-Emitter Saturation Voltage (VBE(sat)) at IC = 5 Ampere (mA), IB = 50 Milliampere (mA) |
N/A 950 mV |
Maximum Base-Emitter Saturation Voltage (VBE(sat)) at IC = 5 Ampere (mA), IB = 50 Milliampere (mA) |
N/A 1050 mV |
Typical Base-Emitter Turn-on Voltage (VBE(on)) at IC = 5 Ampere (mA), VCE = 2 Volt (V) |
N/A 900 mV |
Maximum Base-Emitter Turn-on Voltage (VBE(on)) at IC = 5 Ampere (mA), VCE = 2 Volt (V) |
N/A 1000 mV |
Typical Transitional Frequency (fT) at IC = 50 Milliampere (mA), VCE = 10 Volt (V), f = 100 Megahertz (MHz) |
N/A 180 MHz |
Typical Output Capacitance (Cobo) at VCB = 10 Volt (V), f = 1 Megahertz (MHz) |
N/A 45 pF |
Maximum Output Capacitance (Cobo) at VCB = 10 Volt (V), f = 1 Megahertz (MHz) |
N/A 60 pF |
Typical Switching Time (tON) at VCC = 10 Volt (V), IC = 4 Ampere (A), IB1 = -IB2 = 40 Milliampere (mA) |
N/A 125 ns |
Typical Switching Time (tOFF) at VCC = 10 Volt (V), IC = 4 Ampere (A), IB1 = -IB2 = 40 Milliampere (mA) |
N/A 380 ns |
Features |
N/A
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