Projections Unlimited, Inc
PUI | Global Corporate HQ
15311 Barranca Parkway
Irvine , CA , 92618
United States
Phone:(714) 544-2700
Email: sales@gopui.com
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This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Unit of Measure

Specifications

Available

 N/A {0}

Manufacturer Stock

 N/A {0}

Brands

 N/A Diodes Incorporated®

Manufacturer

 N/A Diodes Incorporated�

Approximate Weight

 N/A 0.008 g

Industry Standards

 N/A Flammability: Underwriters Laboratories (UL) 94V-0 Restriction of Hazardous Substances (RoHS) Compliant

Mechanical Data

Case

 N/A SOT23

Case Material

 N/A Molded Plastic, "Green" Molding Compound.

Terminals

 N/A Matte Tin Finish

Maximum Ratings (at TA= +25 Degree Celsius (ºC) Unless Otherwise Specified)

Drain-Source Voltage (VDSS)

 N/A 100 V

Gate-Source Voltage (VGSS)

 N/A ±20 V

Steady State Continuous Drain Current (ID) at VGS = 10 Volt (V); TA= +25 Degree Celsius (ºC) Temperature

 N/A 0.7 A0.8 A

Steady State Continuous Drain Current (ID) at VGS = 10 Volt (V); TA= +70 Degree Celsius (ºC) Temperature

 N/A 0.6 A

Steady State Continuous Drain Current (ID) at VGS = 10 Volt (V); TA= +100 Degree Celsius (ºC) Temperature

 N/A 0.5 A

Pulsed Drain Current (IDM)

 N/A 3.5 A

Body Diode Continuous Source Current (IS)

 N/A 0.5 A

Body Diode Pulsed Source Current (ISM)

 N/A 3.5 A

Thermal Characteristics (at TA = +25 Degree Celsius (ºC), Unless Otherwise Specified)

Power Dissipation (PD)

 N/A 625 mW806 mW

Thermal Resistance, Junction to Ambient (RθJA)

 N/A 155 ºC/W200 ºC/W

Thermal Resistance, Junction to Leads (RθJL)

 N/A 194 ºC/W

Operating and Storage Temperature Range (TJ, TSTG)

 N/A -55 to +150 ºC

Electrical Characteristics (Tamb = 25 Degree Celsius (ºC), Unless Otherwise Specified)

Minimum Drain-Source Breakdown Voltage (BVDSS) at VGS = 0 Volt (V), ID = 250 Microampere (µA)

 N/A 100 V

Maximum Zero Gate Voltage Drain Current (IDSS) TJ = +25 Degree Celsius (ºC) at VDS = 100 Volt (V), VGS = 0 Volt (V)

 N/A 1 µA

Maximum Gate-Source Leakage (IGSS) at VGS = ±20 Volt (V), VDS = 0 Volt (V)

 N/A 100 nA

Features

Features

 N/A
  • Low On-Resistance
  • Low Threshold
  • Fast Switching Speed
  • Low Gate Drive
  • Totally Lead-Free & Fully RoHS Compliant:
    No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
  • Halogen and Antimony Free. "Green" Device:
    Halogen and Antimony free "Green" products are defined as those which contain < 900 ppm bromine, < 900 ppm chlorine (< 1500 ppm total Br + Cl) and < 1000 ppm antimony compounds.
  • Qualified to AEC-Q101 Standards for High Reliability

Applications

Applications

 N/A
  • DC-DC Converters
  • Power Management Functions
  • Motor Control
  • Disconnect switches

Note

Note

 N/A Note for Continuous Drain Current, Power Dissipation, and Thermal Resistance, Junction to Ambient: For a device surface mounted on 25 mm x 25 mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
Note for Pulsed Drain Current and Pulsed Source Current (Body Diode):
Repetitive rating - 25 mm x 25 mm FR4 PCB, D = 0.02, pulse width 300 μs – pulse width limited by maximum junction temperature.