Transistors
transistors
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. /Asset/91019-pt-large.png
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. /Asset/91070-pt-large.png
The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. /Asset/91192-pt-large.png
IRF530 Series Power Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET)
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. /Asset/91019-pt-large.png
IRF840 Series Power Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET)
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. /Asset/91070-pt-large.png
IRFL110 Series Power Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET)
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. /Asset/91192-pt-large.png
IRFP450A Series Power Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET)
/Asset/91230-pt-large.jpg Negative-Positive-Negative (NPN) Silicon Power Switching Transistors
- with TO-3 package
- High power and high current capability
Negative-Positive-Negative (NPN) Silicon Planar Switching Transistors
Switching and Linear Application DC And VHF Amplifier Applications /Asset/2N2222A.png Negative-Positive-Negative (NPN) Silicon Planar Radio Frequency (RF) Transistors
NPN Transistors, Best Suited For Low Noise VHF And VHF Amplifier Mixer and Oscillator Applications. /Asset/2N918.jpg