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NPN Transistors, Best Suited For Low Noise VHF And VHF Amplifier Mixer and Oscillator Applications.
Unit of Measure

Specifications

Available

 N/A {0}

Manufacturer Stock

 N/A {0}

Brands

 N/A Solid State Inc.

Manufacturer

 N/A Solid State Inc.

Absolute Maximum Ratings (Tamb = 25 Degree Celsius (ºC), Unless Otherwise Specified)

Collector-Base Voltage (VCBO)

 N/A 30 V

Collector-Emitter Voltage (VCEO)

 N/A 15 V

Emitter-Base Voltage (VEBO)

 N/A 3 V

Continuous Collector Current (IC)

 N/A 50 mA

Power Dissipation (PD) at TA = 25 Degree Celsius (ºC) Temperature

 N/A 200 mW

Power Dissipation (PD) at Derate Above 25 Degree Celsius (ºC) Temperature

 N/A 1.14 mW/ºC

Total Device Dissipation (PD) at TC = 25 Degree Celsius (ºC) Temperature

 N/A 300 W

Total Device Dissipation (PD) at Derate Above TC = 25 Degree Celsius (ºC) Temperature

 N/A 1.71 mW/ºC

Operating and Storage Junction Temperature Range (TJ, Tstg)

 N/A -65 to +200 ºC

Minimum Collector Emitter (sus) Voltage BVCEO(SUS) at IC = 3 Milliampere (mA), IB = 0

 N/A 15 V

Minimum Collector Base Breakdown Voltage BVCBO at IC = 1 Microampere (µA), I E = 0

 N/A 30 V

Minimum Emitter Base Breakdown Voltage BVEBO at IE = 10 Microampere (µA), I C = 0

 N/A 3.0 V

Maximum Collector Cut Off Current (ICBO) at VCB = 15 Volt (V), IE = 0

 N/A 10 nA

Maximum Collector Cut Off Current (ICBO) at VCB = 15 Volt (V), IE = 0, Ta = 150 Degree Celsius (ºC)

 N/A 10 µA

Maximum Saturated Collector Emitter Voltage VCE(Sat). at IC =10 Milliampere, IB= 1 Milliampere (mA)

 N/A 0.4 V

Maximum Saturated Base Emitter Voltage VBE(Sat). at IC =10 Milliampere (mA), IB= 1 Milliampere (mA)

 N/A 1.0 V

Minimum Direct Current (DC) Gain (hEF) at IC = 3 Milliampere (mA), VCE= 1 Volt (V)

 N/A 20

Dynamic Characteristics

Maximum Output Capacitance (Cob) at VCB = 10 Volt (V), f = 140 Kilohertz (KHz)

 N/A 1.7 pF

Maximum Output Capacitance (Cob) at VCB = 0, IE=0, f = 140 Kilohertz (KHz)

 N/A 3.0 pF

Input Capacitance (Cib) at VEB = 0.5 Volt (V), IC= 0, f = 140 Kilohertz (KHz)

 N/A 2.0 pF

Minimum High Bandwidth Product (ft) at IC)=4 Milliampere (mA), VCE)= 10 Volt (V), f = 10 Megahertz (MHz)

 N/A 600 MHz

Noise Figure (NF) at IC)=1 Milliampere (mA), VCE)=6 Volt (V), RG)= 400 ohm (Ω), f=60 Megahertz (MHz)

 N/A 6.0 dB

Functional Test

Power Gain (Gpe) at VCB=12 Volt (V), IC=6 Milliampere (mA), f=200 Megahertz (MHz)

 N/A 15 dB

Power Output (PO) at VCB = 12 Volt (V), IC=8 Milliampere (mA), f=500 Megahertz (MHz)

 N/A 30 mW

Collector Efficiency (n) at VCB = 15 Volt (V), IC=8 Milliampere (mA), f=500 Megahertz (MHz)

 N/A 25 %

Dimensions

Minimum Dimension A

 N/A 5.24 mm

Maximum Dimension A

 N/A 5.84 mm

Minimum Dimension B

 N/A 4.52 mm

Maximum Dimension B

 N/A 4.95 mm

Minimum Dimension C

 N/A 4.31 mm

Maximum Dimension C

 N/A 5.33 mm

Minimum Dimension D

 N/A 0.40 mm

Maximum Dimension D

 N/A 0.53 mm

Maximum Dimension E

 N/A 0.76 mm

Minimum Dimension F

 N/A 1.14 mm

Maximum Dimension F

 N/A 1.39 mm

Minimum Dimension G

 N/A 2.28 mm

Maximum Dimension G

 N/A 2.97 mm

Minimum Dimension H

 N/A 0.91 mm

Maximum Dimension H

 N/A 1.17 mm

Minimum Dimension J

 N/A 0.71 mm

Maximum Dimension J

 N/A 1.22 mm

Minimum Dimension K

 N/A 12.70 mm

Minimum Angle L

 N/A 12 º

Maximum Angle L

 N/A 48 º